description the 4n39 and an40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated sil- icon controlled rectifier in a dual in-line package. photo scr optocouplers 4n39 4n40 applications ? low power logic circuits ? telecommunications equipment ? portable electronics ? solid state relays ? interfacing coupling systems of different potentials and impedances. features ? 10 a, t 2 l compatible, solid state relay ? 25 w logic indicator lamp driver ? 400 v symmetrical transistor coupler ? underwriters laboratory (ul) recognized ? file #e90700 6 1 6 1 6 1 cathode anode 1 2 3 anode cathode 4 5 6 gate n/c schematic parameter symbol device value units total device t stg all -55 to +150 c *storage temperature *operating temperature t opr all -55 to +100 c *lead solder temperature t sol all 260 for 10 sec c *total device power dissipation (-55c to 50 c) p d all 450 mw derate above 50c 9.0 mw/c emitter i f all 60 ma *continuous forward current *reverse voltage v r all 6 v *forward current - peak (300 s, 2% duty cycle) i f (pk) all 1.0 a *led power dissipation (-55c to 50 c) p d all 100 mw derate above 50c 2.0 mw/c detector * off-state and reverse voltage 4n39 200 v 4n40 400 v *peak reverse gate voltage 6v *direct on-state current 300 ma *surge on-state current (100 s) 10 a *peak gate current 10 ma *detector power dissipation (-55c to 50c) p d all 400 mw derate above 50c 8.0 mw/c ? ? 2001 fairchild semiconductor corporation ds300381 2/27/01 1 of 9 www.fairchildsemi.com note * indicates jedec registered data ** typical values at t a = 25c
parameter test conditions symbol device min typ** max unit emitter input forward voltage i f = 10 ma v f all 1.1 1.5 v reverse leakage current v r = 3 v i r all 10 a capacitance v f = 0 v, f = 1.0 mhz c j all 50 pf detector peak off-state voltage r gk = 10 k ?, t a =100 c v dm 4n39 200 v 4n40 400 peak reverse voltage t a =100 c v rm 4n39 200 v 4n40 400 on-state voltage i t = 300 ma v t all 1.3 v off-state current v dm = 200 v, t a = 100 c, i dm 4n39 50 a i f = 0 ma, r gk = 10 k ? 4n40 150 reverse current v r = 200 v, t a =100 c, i f = 0 ma i r 4n39 50 a 4n40 150 holding current v fx = 50v, r gk = 27 k ? i h all 1.0 ma individual component characteristics electrical characteristics (t a = 25 c unless otherwise specified.) characteristic test conditions symbol min typ** max units * input-output isolation voltage ( i i-0 1 a, vrms, t = 1 min.) v iso 5300 vac(rms) *isolation resistance (v i-o = 500 vdc) r iso 10 11 ! isolation capacitance (v i-o = ?, f = 1 mhz) c iso 0.8 pf isolation characteristics characteristics test conditions symbol device min typ** max units *input current to trigger v ak = 50 v, r gk = 10 k ? i ft 4n39 30 ma v ak = 100 v, r gk = 27 k ? 4n40 14 *turn-on time v ak = 50 v, i f = 30 ma t on all 50 a r gk = 10 k ? , rl = 200 ? package capacitance f = 1 mhz c i-o all 2 pf (input to output) input to output voltage = 0 coupled dv/dt, input to output dv/dt all 500 v/ s (figure 13) transfer characteristics (t a = 25c unless otherwise specified.) photo scr optocouplers 4n39 4n40 www.fairchildsemi.com 2 of 9 2/27/01 ds300381 note * indicates jedec registered data ** typical values at t a = 25c
50 5 10 1 .5 .1 5 1 10 50 100 200 400 v ak - anode to cathode voltage (volts) figure 1. input current to trigger vs. anode-cathode voltage i ft - normalized input current to trigger 100 1000 10 1 .01 0 .001 0.5 1.0 2.0 3.0 v ak - forward voltage (volts) figure 6. input characteristics i f vs. v f i f - forward current (milliamperes) 40 100 4 6 8 20 2 10 1 .2 .1 .6 .8 .4 2 148 6 10 20 40 60 100 200 400 1000 pulse width (micro seconds) figure 4. input current to trigger vs. pluse width i ft - normalized input current to trigger figure 3. input current to trigger distribution vs. temperature .4 .2 .1 1 .8 .6 6 4 2 12 10 8 -40 -60 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 t a - ambient temperature ( ?c) t a - ambient temperature ( ?c) figure 2. input current to trigger vs. temperature i ft - normalized input current to trigger .4 .2 .1 1 .8 .6 6 4 2 10 8 i ft - normalized input current to trigger 4 6 8 12 2 10 16 14 20 18 24 22 20 10 30 50 40 60 70 80 90 100 i f - input current (milliamperes) figure 5. turn-on time vs. input current t on - turn on time (microseconds) r gk = 300 ? 1k r gk = 300 ? 1k normalized to v ak = 50v r gk = 10k t a = 25?c normalized to v ak = 50v r gk = 10k t a = 25?c v ak = 50v t on = t d + i r t r 1 s normalized to v ak = 50v r gk = 10k t a = 25?c normalized to v ak = 50v r gk = 10k t a = 25?c 10k 27k 56k 10k 27k 56k 1k 10k 27k 56k r gk = 300 ? 90 th percentile 10 th percentile 10k 56k r gk = 1k photo scr optocouplers 4n39 4n40 ds300381 2/27/01 3 of 9 www.fairchildsemi.com
0 25 50 75 100 figure 9. off-state forward current vs. temperature i m - holding current (microamperes) transient thermal impedance ( ? c per watt) 5,000 10,000 500 1000 100 50 10 -20 -40 0 20 40 60 80 100 t a - ambient temperature ( ? c) time (seconds) t a - ambient temperature ( ? c) figure 7. holding current vs. temperature i ft - normalized input current to trigger i d - normalized forward current (off state) 5000 10,000 500 1000 100 50 10 5 1 30 100 20 10 60 50 40 90 80 70 0.2 0.4 0.6 08 10 on-state current (amperes) figure 10. on-state current vs. maximum allowable temperature maximum allowable temperature ( ? c) figure 12. on-state characteristics 010203040 v t - on-state voltage (volts ) .-2 .01 .06 .08 .01 .04 .6 .4 1 .8 .2 2 i t - on-state current (amperes) r gk = 300 ? 1k 10k 27k 56k 1k 56k 400v 50v v ak = 50v normalized to v ak +50v t a +25 ? c .0004 .001 .002 .004 .0001 .0002 .01 .02 .04 1 2 4 10 20 40 100 figure 8. maximum transient thermal impedance 40 1000 10 20 100 200 400 600 60 6 4 2 1 25 50 75 100 figure 11. dv/dt vs. temperature t a - ambient temperature ( ? c) dv/di - critical rate of rise applied forward voltage ( volt/ sec) 500 1000 100 50 10 5 1.0 .5 anode lead temp dc current ambient temp half-sine wave avgerage anode lead temp 1/2 sine wave average ambient temp dc current 10k 27k r gk = 300 ? junction temperature = 100 ? c increases to forward breakover voltage junction temperature = 25 ? c note: (1) lead temperature measured at the widest portion of the scr anode lead (2) ambient temperature measured at a point 1/2" from the device junction to ambient junction to lead www.fairchildsemi.com 4 of 9 2/27/01 ds300381 photo scr optocouplers 4n39 4n40
+5v 470 ? "coil" 4n40 56k 100 ? 47 ? 47 ? sc1460 0.1 f load "contact" 220 v ac in5060 (4) typical applications ds300381 2/27/01 5 of 9 www.fairchildsemi.com photo scr optocouplers 4n39 4n40 fig. 13 coupled dv/dt - test circuit tp + dut - vp h exponential oscilloscope 10 k ? ramp gen. 100 ? +100 v ac vp = 800 volts tp = .010 seconds f = 25 hertz t a = 25 c dv / dt .63 vp vp 10a, t 2 l compatible, solid state relay use of the 4n40 for high sensi- tivity, 5300 v isolation capability, provides this highly reliable solid state relay design. this design is compatible with 74, 74s and 74h series t 2 l logic systems inputs and 220v ac loads up to 10a. logic +5v 56k 470 ? 4n40 0.1 f 220 v ac 100 ? input indicater lamp 25w, logic indicator lamp driver the high surge capability and non-reactive input characteristics of the 4n40 allow it to directly couple, without buffers, t 2 l and dtl logic to indicator alarm devices, without danger of introducing noise and logic glitches. output input 4n40 400v symmetrical transistor coupler use of the high voltage pnp portion of the 4n40 provides a 400v transistor capable of conducting positive and negative signals with current transfer ratios of over 1%. this function is useful in remote instrumentation, high volt- age power supplies and test equipment. care should be taken not to exceed the 40mw power dissipation rating when used at high voltages.
lead coplanarity : 0.004 (0.10) max 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) typ 0.405 (10.30) max 0.315 (8.00) min 0.016 (0.40) min 2 5 pin 1 id. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) typ 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.165 (4.18) 4 3 0.020 (0.51) min 1 6 0.100 (2.54) typ 0.020 (0.51) min 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) pin 1 id. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.300 (7.62) typ 0 to 15 0.154 (3.90) 0.100 (2.54) seating plane 0.016 (0.40) 0.008 (0.20) seating plane 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) min 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) typ 0 to 15 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) typ note all dimensions are in inches (millimeters) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) package dimensions (surface mount) package dimensions (through hole) package dimensions (0.4?lead spacing) recommended pad layout for surface mount leadform www.fairchildsemi.com 6 of 9 2/27/01 ds30381 photo scr optocouplers 4n39 4n40
s .s surface mount lead bend sd .sd surface mount; tape and reel w .w 0.4? lead spacing 300 .300 vde 0884 300w .300w vde 0884, 0.4? lead spacing 3s .3s vde 0884, surface mount 3sd .3sd vde 0884, surface mount, tape & reel option order entry identifier description 4.0 0.1 ?1.55 0.05 user direction of feed 4.0 0.1 1.75 0.10 7.5 0.1 16.0 0.3 12.0 0.1 0.30 0.05 13.2 0.2 4.85 0.20 0.1 max 10.30 0.20 9.55 0.20 ?1.6 0.1 carrier tape specifications (?d? taping orientation) ordering information note all dimensions are millimeters ds300381 2/27/01 7 of 9 www.fairchildsemi.com photo scr optocouplers 4n39 4n40
www.fairchildsemi.com 8 of 9 2/27/01 ds300381 photo scr optocouplers 4n39 4n40 americas customer response center fairchild semiconductor 7701 las colinas ridge suite 400 irving, tx 75063 tel: 888.522.5372 fax: 972.910.8036 china fairchild semiconductor hong kong ltd. shenzhen representative office room 3107, shun hing square di wang commercial centre 5002 shen nan road east shenzhen, p.r.c. 518008 tel: 86.755.246.2088 fax: 86.755.246.2092 china fairchild semiconductor japan ltd hong kong ltd. shanghai representative office room 1110, shanghai international trade centre no. 2200 yan an (w) road shanghai, p.r.c. 200335 tel: 86.21.6208.4118 fax: 86.21.6219.7799 finland fairchild semiconductor itakatu 3 d 213 fin-00930 heisinki finland tel: 358.9.3411266 fax: 358.9.341.1292 france fairchild semiconductor centre d' affairs "le parc de massy" z.i. de la bonde 1bis, rue marcel paul - bat.b f-91742 massy cedex france tel: 33.1.6930.3696 fax: 33.1.6930.3693 germany fairchild semiconductor gmbh oskar-von-miller-strasse 4e d-82256 furstenfeldbruck germany tel: 49.8141.61020 fax: 49.8141.6102.100 hong kong fairchild semiconductor hong kong ltd 19/f, cmg asia tower the gateway ii, 15 canton road tsimshatsui east, kowloon hong kong tel: 852.2722.8338 fax: 852.2722.8383 italy fairchild semiconductor srl via carducci, 125 20099 sesto san giovanni (ml) italy tel: 39.02.249111.1 fax: 39.02.26263424 japan fairchild semiconductor 6f bancho-kaikan 12-1 gobancho, chiyoda-ku, tokyo, 102-0076 japan tel: 81.3.5275.8380 fax: 81.3.5275.8390 japan fairchild semiconductor osaka office shin-osaka meiko building 8f 4-3-12, mlyahara, yodogawa-ku osaka, 532-0003 japan tel: 81.6.6398.3670 fax: 81.6.6398.3680 korea fairchild korea semiconductor, ltd. 82-3, dodang-dong, wonmi-ku, puchon, kyunggi-do, korea, 420-711 tel: 82.32.680.1926 fax: 82.32.680.1949 korea fairchild korea semiconductor, ltd. suwon office 6th floor song-i building, 976-12, youngtong-dong, paldal-ku, suwon, kyunggi-do, korea, 442-470 tel: 82.331.205.0291.8 fax: 82.331.205.3352 korea fairchild korea semiconductor, ltd. kumi office 5th floor shinlim building 447-2, songjung-dong, kumi, kyoungsangbuk-do, korea, 730-090 tel: 82.546.457.4111 fax: 82.546.457.4121 mexico fairchild semiconductor av. vallarta #6503 flr.14 col. cd granjas zapopan jalisco 45010 mexico tel: 52-3-1100017 fax: 52-3-1101878 singapore fairchild semiconductor asia pacific pte. ltd. 350 orchard road #20-01/03 shaw house singapore 238868 tel: 65.836.0936 fax: 65.838.0321/3 sweden fairchild semiconductor industrlvagen 7 se-171 48 solna sweden tel: 46.8.6515530 fax: 46.8.6515505 taiwan fairchild semiconductor hong kong ltd. taiwan branch 16/f. no. 167 tu hwa north road taipei, taiwan tel: 886.2.2712.0500 fax: 886.2.2716.9285 uk fairchild semiconductor ltd. 10 interface business park wootton bassett swindon sn4 8sy united kingdom tel: 44.1793.856856 fax: 44.1793.856857
disclaimer fairchild semiconductor reserves the the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ds300381 2/27/01 9 of 9 www.fairchildsemi.com photo scr optocouplers 4n39 4n40
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